Tunable band inversion in half-Heusler topological LuAuSn/LuPtBi superlattices

被引：4

作者：

Shi, Fangyi ^{[1
]}

Jia, Lei ^{[1
]}

Si, M. S. ^{[1
,2
]}

Zhang, Zhiya ^{[1
]}

Xie, Jiafeng ^{[1
]}

Xiao, Chuntao ^{[1
]}

Yang, Dezheng ^{[1
,2
]}

Shi, Huigang ^{[1
,2
]}

Luo, Qiangjun ^{[3
]}

机构：

[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China

[2] Lanzhou Univ, Minist Educ, Key Lab Special Funct Mat & Struct Design, Lanzhou 730000, Gansu, Peoples R China

[3] Lanzhou Univ, Hosp 1, Lanzhou 730000, Gansu, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 09期

关键词：

TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; BASIS-SET; CRYSTAL;

D O I：

10.7567/APEX.11.095701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A heterostructure formed of topological and nontopological half-Heusler compounds provides a means to tune band inversion. In this work, we study the stabilities of [111] and [100] LuPtBi/LuAuSn half-Heusler superlattices. Since the [111] superlattice is more stable than the [100] one, we explore the band inversion in the [111] superlattice. By increasing the number of LuPtBi layers, the energy gap can be tuned from 0.63 to % -1.50 eV, where the negative value indicates band inversion. The underlying mechanism involves band alignment, internal electric field, and quantum confinement. Our study offers an efficient means to obtain the desired band inversion in half-Heusler heterostructures. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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