Scaling behavior and morphology evolution of CH3NH3PbI3 perovskite thin films grown by thermal evaporation

被引：7

作者：

Liu, Yunyan ^{[1
]}

Zhou, Tong ^{[1
]}

Sun, Meiling ^{[1
]}

Zhao, Dong ^{[1
]}

Wei, Qinqin ^{[1
]}

Sun, Yan ^{[1
]}

Wang, Rendong ^{[1
]}

Jin, Fangming ^{[2
]}

Niu, Quanlin ^{[1
]}

Su, Zisheng ^{[2
]}

机构：

[1] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China

来源：

MATERIALS RESEARCH EXPRESS | 2017年 / 4卷 / 07期

基金：

中国国家自然科学基金;

关键词：

perovskite; thin films; morphology evolution; thermal evaporation; growth mechanism; SOLAR-CELLS; EFFICIENT;

D O I：

10.1088/2053-1591/aa7971

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth dynamics of CH3NH3PbI3 (MAPbI(3)) perovskite thin films, deposited by thermal evaporation, has been investigated by atomic force microscope and height-height correlation function analysis. The unstable scaling behavior of initial perovskite films exhibiting the growth of islands, resulting in rougher film formation has been observed. After the formation of continuous film, the roughening has been characterized by analyzing the scaling exponent alpha similar to 0.70, growth exponent beta = 0.79 +/- 0.057, 1/ z = 0.78 +/- 0.038, and 2D fast Fourier transform. Anomalous scaling behavior of the MAPbI(3) thin films and the formation of the rapid surface roughening are discovered. It is demonstrated that step-edge barrier induced mound growth may play the dominate role in the growth mechanism of MAPbI(3) thin films on Si substrates. Further, the growth behavior of MAPbI(3) film on ITO substrates is investigated as a comparison, and it reveals that the growth of MAPbI(3) thin films is largely affected by the initial substrates underneath the growing films.

引用

页数：7

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