Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures

被引：16
作者：
Liu, X. J. [1 ]
Li, X. M. [1 ]
Wang, Q. [1 ]
Yang, R. [1 ,2 ]
Cao, X. [1 ,2 ]
Yu, W. D. [1 ]
Chen, L. D. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 05期
关键词：
CURRENT-VOLTAGE CHARACTERISTICS; COLOSSAL ELECTRORESISTANCE; WORK FUNCTION;
D O I：
10.1002/pssa.200925409
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
La0.7Ca0.3MnO3 (LCMO) films with and without in situ oxygen annealing have been prepared by pulsed laser deposition. After depositing Ti top electrodes (TEs) at room temperature, both the Ti/LCMO/Pt structures show a reversible, nonlinear, and hysteretic current voltage (I-V) characteristics. The switching ratio between high and low resistance state is significantly reduced by in situ oxygen annealing due to the decrease of oxygen vacancies in the surface of LCMO film. Moreover, the switching ratio is also significantly reduced by depositing Ti TEs at a higher temperature such as 200 degrees C. These results suggest that the oxidation/reduction reaction between the TiOx. interlayer and the oxygen-deficient LCMO layer plays a crucial role in the resistive switching of the Ti/LCMO/Pt structures. Furthermore, it is also suggested that the formation/rupture of the conductive filament paths in the TiOx interlayer by the electrochemical migration of oxygen is responsible for the anomalous changes of current and the large hysteresis in the I-V curves. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1204 / 1209
页数：6
相关论文
共 22 条
[1]  
Baek I. G., 2004, INT EL DEV M, V587
[2]   Resistance random access memory switching mechanism [J].
Hsu, Sheng T. ;
Li, Tingkai ;
Awaya, Nobuyoshi .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[3]   Electric pulse induced resistance change effect in manganites due to polaron localization at the metal-oxide interfacial region [J].
Jooss, Ch. ;
Hoffmann, J. ;
Fladerer, J. ;
Ehrhardt, M. ;
Beetz, T. ;
Wu, L. ;
Zhu, Y. .
PHYSICAL REVIEW B, 2008, 77 (13)
[4]   Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films [J].
Kim, Kyung Min ;
Choi, Byung Joon ;
Hwang, Cheol Seong .
APPLIED PHYSICS LETTERS, 2007, 90 (24)
[5]   Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes [J].
Li, Song-Lin ;
Shang, D. S. ;
Li, J. ;
Gang, J. L. ;
Zheng, D. N. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
[6]   Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices [J].
Liao, Z. L. ;
Wang, Z. Z. ;
Meng, Y. ;
Liu, Z. Y. ;
Gao, P. ;
Gang, J. L. ;
Zhao, H. W. ;
Liang, X. J. ;
Bai, X. D. ;
Chen, D. M. .
APPLIED PHYSICS LETTERS, 2009, 94 (25)
[7]   Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].
Liu, SQ ;
Wu, NJ ;
Ignatiev, A .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751
[8]   The effect of Fe doping on structural, magnetic and electrical transport properties of CaMn1-xFexO3 (x=0-0.35) [J].
Liu, X. J. ;
Li, Z. Q. ;
Wu, P. ;
Bai, H. L. ;
Jiang, E. Y. .
SOLID STATE COMMUNICATIONS, 2007, 142 (09) :525-530
[9]   Improved resistive switching properties in Ti/TiOx/La0.7Ca0.3MnO3/Pt stacked structures [J].
Liu, X. J. ;
Li, X. M. ;
Wang, Q. ;
Yu, W. D. ;
Yang, R. ;
Cao, X. ;
Gao, X. D. ;
Chen, L. D. .
SOLID STATE COMMUNICATIONS, 2010, 150 (1-2) :137-141
[10]   WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].
MICHAELSON, HB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733
123