Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures

被引:16
|
作者
Liu, X. J. [1 ]
Li, X. M. [1 ]
Wang, Q. [1 ]
Yang, R. [1 ,2 ]
Cao, X. [1 ,2 ]
Yu, W. D. [1 ]
Chen, L. D. [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 05期
关键词
CURRENT-VOLTAGE CHARACTERISTICS; COLOSSAL ELECTRORESISTANCE; WORK FUNCTION;
D O I
10.1002/pssa.200925409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
La0.7Ca0.3MnO3 (LCMO) films with and without in situ oxygen annealing have been prepared by pulsed laser deposition. After depositing Ti top electrodes (TEs) at room temperature, both the Ti/LCMO/Pt structures show a reversible, nonlinear, and hysteretic current voltage (I-V) characteristics. The switching ratio between high and low resistance state is significantly reduced by in situ oxygen annealing due to the decrease of oxygen vacancies in the surface of LCMO film. Moreover, the switching ratio is also significantly reduced by depositing Ti TEs at a higher temperature such as 200 degrees C. These results suggest that the oxidation/reduction reaction between the TiOx. interlayer and the oxygen-deficient LCMO layer plays a crucial role in the resistive switching of the Ti/LCMO/Pt structures. Furthermore, it is also suggested that the formation/rupture of the conductive filament paths in the TiOx interlayer by the electrochemical migration of oxygen is responsible for the anomalous changes of current and the large hysteresis in the I-V curves. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1204 / 1209
页数:6
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