Thermoelectric power and Hall effect measurements in polycrystalline CdTe thin films

被引:0
作者
Paez, BA [1 ]
机构
[1] Pontificia Univ Javeriana, Thin Films Grp, Dept Phys, Santafe De Bogota, Colombia
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 220卷 / 01期
关键词
D O I
10.1002/1521-3951(200007)220:1<221::AID-PSSB221>3.0.CO;2-K
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline CdTe thin films deposited by Close Space Sublimation (CSS), were characterized through thermoelectric power, alpha, Hall coefficient, and resistivity, Q, measurements in the range of 90 to 400 K. This was in order to determine the scattering mechanisms which mainly affect the electrical transport properties in CdTe thin films. The results were analyzed based on theoretical calculations of a against temperature. This model includes scattering processes within the grains and at the grain boundaries. Some of the parameters used in this calculation were determined experimentally: grain size, crystal structure, activation energy and effective mass. It is important to state that the main approximations were justified according to experimental measurements.
引用
收藏
页码:221 / 225
页数:5
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