Synthesis and characterization of Ga2O3 nanowires

被引：0
|
作者：
Cai, K. F. [1 ]
Yan, C. [1 ]
He, X. R. [1 ]
Zhang, A. X. [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, 1239 Siping Rd, Shanghai 200092, Peoples R China
来源：
NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2 | 2007年 / 121-123卷
基金：
国家教育部优秀青年教师资助计划;
关键词：
nanowires; Ga2O3; vapor-solid process; synthesis; characterization; OXIDE; BETA-GA2O3; DEFECTS;
D O I：
10.4028/www.scientific.net/SSP.121-123.299
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ga2O3 nanowires were prepared by vapor-solid process in atmosphere, using commercial Ga ingot and Ga2O3 powder or Al2O3 powder as the starting materials. The influence of preparation conditions such as temperature and starting material on the products was studied. The composition and morphology of the products were characterized by XRD, SEM/EDX, TEM, and HRTEM. The formation mechanism of the products was proposed.
引用
收藏
页码：299 / 302
页数：4
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