High-Performance (Na0.5K0.5)NbO3 Thin Film Piezoelectric Energy Harvester

被引：28
作者：
Kim, Bo-Yun [1 ]
Seo, In-Tae [2 ]
Lee, Youn-Seon [2 ]
Kim, Jin-Seong [2 ]
Nahm, Sahn [1 ,2 ]
Kang, Chong-Yun [3 ]
Yoon, Seok-Jin [3 ]
Paik, Jong-Hoo [4 ]
Jeong, Young-Hun [4 ]
机构：
[1] KU KIST Grad Sch Converging Sci & Technol, Dept Nano Bio Informat Technol, Seoul 136701, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[3] Ctr Elect Mat, Seoul 137791, South Korea
[4] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
POTASSIUM-SODIUM NIOBATE; ELECTRICAL-PROPERTIES; LOW-TEMPERATURE; NANOGENERATOR; CERAMICS; GROWTH;
D O I：
10.1111/jace.13238
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The pseudocubic structure of a (Na0.5K0.5)NbO3 (NKN) film grown on a Pt/Ti/SiO2/Si substrate changed to an orthorhombic structure when the film was transferred onto a polyimide substrate. Piezoelectric constant for the transferred NKN film increased considerably from 74 +/- 11 to 120 +/- 18pm/V because the crystal structure of the film had changed from pseudocubic to orthorhombic. A gold interdigitated electrode was deposited onto the transferred NKN film to synthesize a NKN piezoelectric energy harvester. The NKN piezoelectric energy harvester was poled before bending under a 100kV/cm DC electric field across the electrodes. When a strain of 0.85% and a strain rate of 4.05%/s were applied to the NKN piezoelectric energy harvester, it produced a maximum output voltage of 1.9V and a current of 38nA, corresponding to a power density of 2.89W/cm(3).
引用
收藏
页码：119 / 124
页数：6
相关论文
共 50 条
[21]   Electrical and Physical Properties of (K0.5Na0.5)NbO3 Ferroelectric Thin Films [J].
Kuan, Min-Chang ;
Yang, Fann-Wei ;
Cheng, Chien-Min ;
Chen, Kai-Huang ;
Lee, Jian-Tz .
HIGH-PERFORMANCE CERAMICS VIII, 2014, 602-603 :800-803
[22]   Effects of K Excess on the Preparation and Characterization of (K0.5Na0.5)NbO3 Ceramics [J].
Zhang, Dongsheng ;
Zhang, Zheng .
FERROELECTRICS, 2014, 466 (01) :8-13
[23]   An approach to further improve piezoelectric and ferroelectric properties of (K0.5Na0.5)NbO3 ceramic [J].
Chen, Xiuli ;
He, Fen ;
Chen, Jie ;
Wang, Yiliang ;
Zhou, Huanfu ;
Fang, Liang .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (06) :2634-2637
[24]   Structure and High Performance of Lead-Free (K0.5Na0.5)NbO3 Piezoelectric Nanofibers with Surface-Induced Crystallization at Lowered Temperature [J].
Yousry, Yasmin Mohamed ;
Yao, Kui ;
Tan, Xiaoli ;
Mohamed, Ayman Mahmoud ;
Wang, Yumei ;
Chen, Shuting ;
Ramakrishna, Seeram .
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (26) :23503-23511
[25]   Characterization of Liquid Phase in (Na0.5K0.5)NbO3 Ceramics with V2O5 Additions [J].
Ryu, Hyun ;
Kim, Young-Heon ;
Lee, Hwack-Joo ;
Cho, Yang-Koo ;
Nahm, Sahn .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) :0914051-0914054
[26]   Effects of vacancies on the dielectric and piezoelectric properties of (Na0.5K0.5)NbO3-SrTiO3 solid solution [J].
Wang, Ruiping ;
Tachibana, Norio ;
Miura, Noboru ;
Hanada, Kotaro ;
Matsusaki, Konio ;
Bando, Hiroshi ;
Itoh, Mitsuru .
FERROELECTRICS, 2006, 331 :135-139
[27]   Compositional inhomogeneity and segregation in (K0.5Na0.5)NbO3 ceramics [J].
Chen, Kepi ;
Tang, Jing ;
Chen, Yan .
CERAMICS INTERNATIONAL, 2016, 42 (08) :9949-9954
[28]   Acceptor doping effects in (K0.5Na0.5)NbO3 lead-free piezoelectric ceramics [J].
Chen, Kepi ;
Zhang, Fangli ;
Li, Dianshan ;
Tang, Jing ;
Jiao, Yanlin ;
An, Linan .
CERAMICS INTERNATIONAL, 2016, 42 (02) :2899-2903
[29]   Growth and characterization of (K0.5 Na0.5)NbO3 thin films by a sol-gel method [J].
Kang, Chiwon ;
Park, Jung-Hyun ;
Shen, Dongna ;
Ahn, Hosang ;
Park, Minseo ;
Kim, Dong-Joo .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2011, 58 (01) :85-90
[30]   The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films [J].
Ahn, C. W. ;
Lee, S. Y. ;
Lee, H. J. ;
Ullah, A. ;
Bae, J. S. ;
Jeong, E. D. ;
Choi, J. S. ;
Park, B. H. ;
Kim, I. W. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (21)
12345