Towards the synthesis of semiconducting single-walled carbon nanotubes by floating-catalyst chemical vapor deposition: Challenges of reproducibility

被引:25
作者
Ding, Er-Xiong [1 ]
Liu, Peng [1 ]
Khan, Abu Taher [1 ]
Zhang, Qiang [1 ]
Wei, Nan [1 ]
Jiang, Hua [1 ]
Kauppinen, Esko, I [1 ]
机构
[1] Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland
基金
芬兰科学院;
关键词
Gas-phase synthesis; Semiconducting single-walled carbon; nanotubes; Pressure; Methanol; Reproducibility; LARGE-DIAMETER; IN-SITU; HIGH-DENSITY; GROWTH; WATER; TRANSISTORS; CHIRALITY; PRESSURE; PROGRESS;
D O I
10.1016/j.carbon.2022.04.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are of paramount significance for the fabrication of high-performance electronics. Here, we present continuous production of highpurity, long, and isolated s-SWCNTs by gas-phase synthesis, retaining the pristine morphologies of assynthesized nanotubes. The s-SWCNTs were synthesized at ca. 920 degrees C using ethanol and methanol as carbon source and growth enhancer, respectively in N2 and H2. The purity of as-produced s-SWCNTs with a mean length of 15.2 mm can reach 98% as determined by optical absorption spectroscopy. We observed that the overpressure in the reactor and methanol are the principal causes of the enrichment of sSWCNTs. Specifically, the s-SWCNTs were found to be more negatively charged, and oxygen-contained species play critical roles in the s-SWCNT synthesis. Through the demonstration of field-effect transistors, the s-SWCNTs exhibit a high mean charge carrier mobility of 453.3 cm2 V-1 s-1 which is 2.27 times higher than that of the transistors fabricated with high-quality dispersion-processed SWCNTs. Additionally, we discuss the challenges of synthesis repeatability and recommend a few tips to improve reproducibility. Our study represents an important step towards the scalable production of clean, long, and isolated s-SWCNTs with high purity and narrow bandgap distribution.(c) 2022 The Author(s). Published by Elsevier Ltd.
引用
收藏
页码:92 / 100
页数:9
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