共 53 条
Towards the synthesis of semiconducting single-walled carbon nanotubes by floating-catalyst chemical vapor deposition: Challenges of reproducibility
被引:25
作者:

Ding, Er-Xiong
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机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Liu, Peng
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h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Khan, Abu Taher
论文数: 0 引用数: 0
h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Zhang, Qiang
论文数: 0 引用数: 0
h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Wei, Nan
论文数: 0 引用数: 0
h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Jiang, Hua
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h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland

Kauppinen, Esko, I
论文数: 0 引用数: 0
h-index: 0
机构:
Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland
机构:
[1] Aalto Univ, Sch Sci, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland
来源:
基金:
芬兰科学院;
关键词:
Gas-phase synthesis;
Semiconducting single-walled carbon;
nanotubes;
Pressure;
Methanol;
Reproducibility;
LARGE-DIAMETER;
IN-SITU;
HIGH-DENSITY;
GROWTH;
WATER;
TRANSISTORS;
CHIRALITY;
PRESSURE;
PROGRESS;
D O I:
10.1016/j.carbon.2022.04.020
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are of paramount significance for the fabrication of high-performance electronics. Here, we present continuous production of highpurity, long, and isolated s-SWCNTs by gas-phase synthesis, retaining the pristine morphologies of assynthesized nanotubes. The s-SWCNTs were synthesized at ca. 920 degrees C using ethanol and methanol as carbon source and growth enhancer, respectively in N2 and H2. The purity of as-produced s-SWCNTs with a mean length of 15.2 mm can reach 98% as determined by optical absorption spectroscopy. We observed that the overpressure in the reactor and methanol are the principal causes of the enrichment of sSWCNTs. Specifically, the s-SWCNTs were found to be more negatively charged, and oxygen-contained species play critical roles in the s-SWCNT synthesis. Through the demonstration of field-effect transistors, the s-SWCNTs exhibit a high mean charge carrier mobility of 453.3 cm2 V-1 s-1 which is 2.27 times higher than that of the transistors fabricated with high-quality dispersion-processed SWCNTs. Additionally, we discuss the challenges of synthesis repeatability and recommend a few tips to improve reproducibility. Our study represents an important step towards the scalable production of clean, long, and isolated s-SWCNTs with high purity and narrow bandgap distribution.(c) 2022 The Author(s). Published by Elsevier Ltd.
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页码:92 / 100
页数:9
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