Nanostructured metal oxide semiconductor-based gas sensors: A comprehensive review

被引:239
作者
Krishna, Kurugundla Gopi [1 ]
Parne, Saidireddy [1 ]
Pothukanuri, Nagaraju [2 ]
Kathirvelu, Velavan [1 ]
Gandi, Suman [1 ]
Joshi, Dhananjay [3 ]
机构
[1] Natl Insitute Technol, Dept Appl Sci, Goa 403401, India
[2] CMR Tech Campus, Dept Phys, Nanosensor Res Lab, Medchal Rd, Hyderabad 501401, Telangana State, India
[3] Indian Inst Sci Educ & Res Mohali, Dept Phys, Mohali 140306, India
关键词
Metal oxide semiconductors; Nanomaterials; Thin films; Gas sensors; And response and recovery times; DOPED ZNO NANOPARTICLES; SENSING PROPERTIES; THIN-FILMS; HYDROTHERMAL SYNTHESIS; SPRAY-PYROLYSIS; PPB-LEVEL; GRAPHENE OXIDE; FAST-RESPONSE; DIRECT GROWTH; ETHANOL;
D O I
10.1016/j.sna.2022.113578
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanostructured metal oxide semiconductor-based gas sensors possess extensive applications due to relatively inexpensive, lightweight, long-lasting, robust, and high sensitivity and quick response and recovery times. Several strategies have been developed to enhance their sensing properties and meet the extended market demand for novel applications by modifying surface morphology, reducing particle size, and manipulating function.This work mainly concentrates on the systematic review of various synthesis methods of nanostructured metal oxide-based semiconductors and their superior gas sensing properties, such as fast response and recovery and a low detection limit towards different hazardous gases.With the prime concern of environmental pollution, a wide range of novel nanostructured metal-oxide based semiconductor gas sensors and their gas sensing properties are interpreted and summarized here.It is essential to measure the sensitivity of the sensors to ensure that they are prepared in a reproducible manner.They must work in ambient conditions andin the presence of humidity. Recent progress in the research and development of metal oxide semiconductor-based gas sensor technology is surveyed in this review. From the bottleneck, this review organizes some prospects that can be expected in future investigations on the gas sensing mechanism of metal oxide semiconductors.
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页数:17
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