A review of positive charge formation in gate oxides

被引：0

作者：

Zhang, JF ^{[1
]}

Zhao, CZ ^{[1
]}

机构：

[1] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Positive charge formation in gate oxides is an important reliability issue for CMOS technologies. Despite of the efforts in the last several decades, our understanding of it is still limited. in this paper, recent progresses in this area are reviewed. We start with as-grown hole traps and then demonstrate that new hole traps can be created by electrical stresses. Properties of both generated and as-grown hole traps are investigated and compared. different types of hole traps are identified and the relation between hole traps and the well-known anomalous positive charges will be explored. Finally, we will show that, apart from hole trapping, positive charges can also be formed by creating non-reactive hydrogenous species.

引用

页码：781 / 786

页数：6

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