1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

被引:65
作者
Hu, Zongyang [1 ]
Nomoto, Kazuki [1 ]
Qi, Meng [2 ,3 ]
Li, Wenshen [1 ]
Zhu, Mingda [1 ]
Gao, Xiang [4 ]
Jena, Debdeep [1 ,5 ]
Xing, Huili Grace [1 ,5 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[3] Uber Technol Inc, San Francisco, CA 94103 USA
[4] IQE RF LLC, Somerset, NJ 08873 USA
[5] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
关键词
p-n junction; molecular beam epitaxy; regrowth; breakdown voltage; specific on-resistance; ideality factor; bulk gallium nitride (GaN); avalanche; power electronics; MG; TRANSISTORS; CONDUCTION; LEAKAGE;
D O I
10.1109/LED.2017.2720747
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-voltage vertical regrown p-n junction diodes on bulkGaN substrates are reported in this letter with molecular-beam-epitaxy regrown p-GaN on metalorganic chemical-vapor-deposition grown n-GaN drift region. The highest breakdown voltage is measured at 1135 V, and the differential on-resistance is 3.9 mOhm.cm(2) at room temperature. The forward I-Vs show a turn-ON voltage near 3.9 V and an ideality factor of 2.5. Electroluminescence measurement of regrown p-n junctions shows similar to 30 times reduced emission intensity compared with as-grown p-n junctions, indicating presence of excessive non-radiative recombination centers introduced by the regrowth process. Temperature dependent reverse I-V measurements suggest that variable range hopping inside the depleted regrown p-GaN layer is likely the mechanism of the reverse leakage. This is the first high-voltage vertical regrown p-n junction ever reported in the GaN system.
引用
收藏
页码:1071 / 1074
页数:4
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