Microwave dielectric properties of SiC(B) solid solution powder prepared by combustion synthesis

被引：0

作者：

Su, X. ^{[1
,2
]}

Zhou, W. ^{[2
]}

Xu, J. ^{[1
]}

Li, Z. ^{[3
]}

Luo, F. ^{[2
]}

Zhu, D. ^{[2
]}

Wang, J. ^{[1
]}

机构：

[1] Xian Polytech Univ, Coll Mech & Elect Engn, Xian 710048, Shaanxi, Peoples R China

[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China

[3] Xidian Univ, Sch Tech Phys, Xian 710071, Shaanxi, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 09期

关键词：

SiC(B); Microwave dielectric properties; Powder; Combustion synthesis; SILICON-CARBIDE POWDERS; CARBOTHERMAL REDUCTION; NANOPARTICLES; CARBON; DEPOSITION; DIFFUSION; MECHANISM; BORON;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

B-doped SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and boron oxide as the dopant. The prepared powders have fine spherical particles and narrow particle size distribution. The electric permittivities of beta-sic samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the beta-sic doped with 5% B2O3 has the highest real part epsilon' and imaginary part epsilon '' of permittivity. The mechanism of dielectric loss by doping has been discussed.

引用

页码：1350 / 1353

页数：4

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