Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

被引：13

作者：

Sun Guo-Sheng ^{[1
,2
]}

Liu Xing-Fang ^{[1
,2
]}

Wang Lei ^{[2
]}

Zhao Wan-Shun ^{[2
]}

Yang Ting ^{[2
]}

Wu Hai-Lei ^{[2
]}

Yan Guo-Guo ^{[2
]}

Zhao Yong-Mei ^{[3
]}

Ning Jin ^{[3
]}

Zeng Yi-Ping ^{[1
,2
]}

Li Jin-Min ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 08期

基金：

中国国家自然科学基金;

关键词：

3C-SiC; heteroepitaxial; multi-wafer; uniformity; SILICON-CARBIDE; FILMS; SI; DEPOSITION; DEVICES; WAFERS; MEMS;

D O I：

10.1088/1674-1056/19/8/088101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH(3) doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

引用

页数：5

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