Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

被引：4
作者：
Xu, ZC
Leosson, K
Birkedal, D
Hvam, JM
Sadowski, I
Zhao, ZY
Chen, XS
Liu, YM
Yang, KT
机构：
[1] Tech Univ Denmark, Optoelect Grp, Res Ctr COM, DK-2800 Lyngby, Denmark
[2] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[3] Anhui Univ, Dept Phys, Hefei 230039, Anhui, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
nanostructures; X-ray diffraction; molecular beam epitaxy; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02388-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：177 / 180
页数：4
相关论文
共 13 条
[1]   Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap [J].
Babinski, A ;
Jasinski, J ;
Bozek, R ;
Szepielow, A ;
Baranowski, JM .
APPLIED PHYSICS LETTERS, 2001, 79 (16) :2576-2578
[2]  
Fafard S., 1995, PHYS REV B, V52, P5752
[3]   Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots [J].
Heinrichsdorff, F ;
Grundmann, M ;
Stier, O ;
Krost, A ;
Bimberg, D .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :540-545
[4]   Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots [J].
Heitz, R ;
Grundmann, M ;
Ledentsov, NN ;
Eckey, L ;
Veit, M ;
Bimberg, D ;
Ustinov, VM ;
Egorov, AY ;
Zhukov, AE ;
Kopev, PS ;
Alferov, ZI .
APPLIED PHYSICS LETTERS, 1996, 68 (03) :361-363
[5]   Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing [J].
Hsu, TM ;
Lan, YS ;
Chang, WH ;
Yeh, NT ;
Chyi, JI .
APPLIED PHYSICS LETTERS, 2000, 76 (06) :691-693
[6]   ELECTRON RELAXATION IN A QUANTUM DOT - SIGNIFICANCE OF MULTIPHONON PROCESSES [J].
INOSHITA, T ;
SAKAKI, H .
PHYSICAL REVIEW B, 1992, 46 (11) :7260-7263
[7]   Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing [J].
Kosogov, AO ;
Werner, P ;
Gosele, U ;
Ledentsov, NN ;
Bimberg, D ;
Ustinov, VM ;
Egorov, AY ;
Zhukov, AE ;
Kopev, PS ;
Bert, NA ;
Alferov, ZI .
APPLIED PHYSICS LETTERS, 1996, 69 (20) :3072-3074
[8]   Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots [J].
Leon, R ;
Kim, Y ;
Jagadish, C ;
Gal, M ;
Zou, J ;
Cockayne, DJH .
APPLIED PHYSICS LETTERS, 1996, 69 (13) :1888-1890
[9]   DYNAMICAL THEORY OF DIFFRACTION APPLICABLE TO CRYSTALS WITH ANY KIND OF SMALL DISTORTION [J].
TAKAGI, S .
ACTA CRYSTALLOGRAPHICA, 1962, 15 (DEC) :1311-&
[10]   THEORIE DYNAMIQUE DE LA DIFFRACTION DES RAYONS X PAR LES CRISTAUX DEFORMES [J].
TAUPIN, D .
BULLETIN DE LA SOCIETE FRANCAISE MINERALOGIE ET DE CRISTALLOGRAPHIE, 1964, 87 (04) :469-&
12