High-Field and Thermal Transport in 2D Atomic Layer Devices

被引：2

作者：

Serov, Andrey ^{[1
]}

Dorgan, Vincent E. ^{[1
]}

Behnam, Ashkan ^{[1
]}

English, Chris. D. ^{[2
]}

Li, Zuanyi ^{[2
,3
]}

Islam, Sharnali ^{[1
]}

Pop, Eric ^{[1
,2
]}

机构：

[1] Univ Illinois, Elect & Comp Engn, Urbana, IL 61801 USA

[2] Stanford Univ, Elect Engn, Stanford, CA 94305 USA

[3] Univ Illinois, phys, Urbana, IL 61801 USA

来源：

MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS VI | 2014年 / 9083卷

关键词：

graphene; MoS2; thermal; high-field; velocity; saturation; ballistic; GRAPHENE; CONDUCTIVITY; TRANSISTORS; DEPENDENCE; MOBILITY;

D O I：

10.1117/12.2052093

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reviews our recent results of high-field electrical and thermal properties of atomically thin two-dimensional materials. We show how self-heating affects velocity saturation in suspended and supported graphene. We also demonstrate that multi-valley transport must be taken into account to describe high-field transport in MoS2. At the same time we characterized thermal properties of suspended and nanoscale graphene samples over a wide range of temperatures. We uncovered the effects of edge scattering and grain boundaries on thermal transport in graphene, and showed how the thermal conductivity varies between diffusive and ballistic heat flow limits

引用

页数：9

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