A Sub-1-V 194-μW 31-dB FOM 2.3-2.5-GHz Mixer-First Receiver Frontend for WBAN With Mutual Noise Cancellation

被引:18
作者
Rahman, Mustafijur [1 ]
Harjani, Ramesh [1 ]
机构
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
关键词
802.15.6; low power; noise cancellation; receiver; RF; wireless body area network (WBAN); LOW-VOLTAGE;
D O I
10.1109/TMTT.2016.2536603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power low-noise 0.7-V mixer-first RF frontend for an IEEE 802.15.6 narrowband receiver is presented, which uses frequency translated mutual noise cancellation based on passive coupling. Unlike traditional noise-cancelling techniques, we perform symmetrical noise cancellation of a fully differential structure where each path cancels the noise of the other at IF. This prototype design realized in TSMC's 65-nm CMOS tackles the noise figure and power consumption problems of sub-1-V mixers. The figure of merit is 10 dB higher and the power consumption is 194 mu W, which is 0.5 x lower than the state-of-the-art. The local oscillator power used is -14 dBm.
引用
收藏
页码:1102 / 1109
页数:8
相关论文
共 25 条
  • [1] Abdelghany M.A., 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium, P1
  • [2] [Anonymous], 2012, 8021562012 IEEE STAN, DOI DOI 10.1109/IEEESTD.2012.6161600
  • [3] Wideband balun-LNA with simultaneous output balancing, noise-canceling and distortion-canceling
    Blaakmeer, Stephan C.
    Klumperink, Eric A. M.
    Leenaerts, Domine M. W.
    Nauta, Bram
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (06) : 1341 - 1350
  • [4] Bluetooth SIG, 2010, SPEC BLUET SYST V4 0
  • [5] Wide-band CMOS low-noise amplifier exploiting thermal noise canceling
    Bruccoleri, F
    Klumperink, EAM
    Nauta, B
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (02) : 275 - 282
  • [6] Noise and Nonlinearity Modeling of Active Mixers for Fast and Accurate Estimation
    Cheng, Wei
    Annema, Anne Johan
    Croon, Jeroen A.
    Nauta, Bram
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2011, 58 (02) : 276 - 289
  • [7] Differentially driven symmetric microstrip inductors
    Danesh, M
    Long, JR
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (01) : 332 - 341
  • [8] Noise in RF-CMOS mixers: A simple physical model
    Darabi, H
    Abidi, AA
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (01) : 15 - 25
  • [9] Deguchi J., 2009, IEEE INT SOLID STATE, P224
  • [10] AN ANALYTICAL MOS-TRANSISTOR MODEL VALID IN ALL REGIONS OF OPERATION AND DEDICATED TO LOW-VOLTAGE AND LOW-CURRENT APPLICATIONS
    ENZ, CC
    KRUMMENACHER, F
    VITTOZ, EA
    [J]. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1995, 8 (01) : 83 - 114