Valence band anticrossing in GaBixAs1-x

被引：288

作者：

Alberi, K. ^{[1
]}

Dubon, O. D.

Walukiewicz, W.

Yu, K. M.

Bertulis, K.

Krotkus, A.

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2768312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of GaBixAs1-x(0.04 < x < 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the band gap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T-2 states of the Bi atoms. (c) 2007 American Institute of Physics.

引用

页数：3

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