A novel piezoresistive accelerometer for high accuracy and overload ability

被引:0
作者
Zhang, W [1 ]
Zhang, YF [1 ]
Wan, PY [1 ]
Wang, YY [1 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词
accelerometer; MEMS; simulation; overload;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and simulation of a novel acceleration sensor with high accuracy and overload ability. A super-stable structure with quad-beams, which has highly symmetric structure has been designed, and this help to eliminate the errors caused by the change of the dimensions and position of the piezoresistors in structure. At the same time, this structure induces films between the beams to reduce the cross-axis sensitivity. Some holes are made in the films to reduce the vertical rigidity Thus, the films have little effect on the sensitivity. Besides, the sandwich structure is adopted In this device, the damping of the device is controlled by adjusting the clearances between the caps and the seismic mass which can obtain the large bandwidth and good frequency response. The bumps are made on two caps to get high overload ability. The piezoresistors are covered with metal layer to improve the electric performance. The structure made beneficial to the high resolution, low cross-axis sensitivity, high overload and good electric performance of the device.
引用
收藏
页码:1828 / 1830
页数:3
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