Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

被引：112

作者：

Burkhardt, Martin ^{[1
]}

Jedaa, Abdesselam ^{[1
]}

Novak, Michael ^{[1
]}

Ebel, Alexander ^{[2
]}

Voitchovsky, Kislon ^{[3
,4
]}

Stellacci, Francesco ^{[3
,4
]}

Hirsch, Andreas ^{[2
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Organ Mat & Devices Inst Polymer Mat, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Organ Chem 2, D-91054 Erlangen, Germany

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 23期

基金：

瑞士国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; POLYMER; PERFORMANCE; MATRIX; FLASH; SHIFT;

D O I：

10.1002/adma.201000030

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A mixed self-assembled monolayer containing aliphatic and electron-accepting (C-60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned.

引用

页码：2525 / 2528

页数：4

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