Dependence of the bonding structure of DLC thin films on the deposition conditions of PECVD method

被引:46
作者
Kim, YT
Cho, SM
Choi, WS
Hong, B
Yoon, DH [1 ]
机构
[1] Sungkyunkwan Univ, Dept Adv Mat Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Sch Elect & Comp Engn, Suwon 440746, South Korea
关键词
DLC; Raman scattering spectroscopy; PECVD; roughness;
D O I
10.1016/S0257-8972(03)00069-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Diamond-like carbon (DLC) films were deposited by using a plasma enhanced chemical vapor deposition (PECVD) onto Si(100) wafer. We observed the variations of the D and G peaks of the DLC thin films with respect to the deposition conditions. The change of the intensity ratio (I-D/I-G) of the DLC thin films was investigated as a function of RF power and pressure which were the important variables in PECVD. DLC films showed an ultra-smooth surface (r.m.s. roughness = 1.2 Angstrom) and an impurity-free quality. With the increase of the RF power, roughness of the films was varied between 1.2 and 26.24 Angstrom. Atomic force microscopy was used to observe the surface roughness. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:291 / 294
页数:4
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