Power-Efficient CMOS Cellular RF Receivers for Carrier Aggregation According to RF Front-End Configuration

被引:17
作者
Kim, Youngmin [1 ]
Han, Junghwan [1 ,2 ]
Lee, Jae-Seung [1 ]
Jin, Taehwan [1 ]
Jang, Pilsung [1 ]
Shin, Heeseon [1 ]
Lee, Jongwoo [1 ]
Cho, Thomas Byunghak [1 ]
机构
[1] Samsung Elect Co Ltd, Hwaseong 18448, South Korea
[2] Chungnam Natl Univ, Dept Radio Sci & Informat Commun Engn, Daejeon 34134, South Korea
关键词
Receivers; Radio frequency; Narrowband; Wideband; Noise measurement; Topology; Long Term Evolution; Carrier aggregation (CA); cellular receiver; complementary metal-oxide-semiconductor (CMOS); current-efficient; current-reuse; interband; intraband; long-term evolution (LTE); low-noise amplifier (LNA); passive mixer; radio frequency (RF) front-end module; wideband receiver;
D O I
10.1109/TMTT.2020.3038775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents power-efficient radio frequency (RF) receiver designs, particularly for advanced long-term evolution cellular applications. The two proposed single-ended receiver architectures can fully support multiple-channel RF signals in advanced carrier aggregation (CA) scenarios with maximum design flexibility depending on the RF front-end module configuration and target applications. Two different low-noise amplifier (LNA) topologies are employed in receivers to achieve different bandwidth handling capabilities and linearity requirements. The first receiver architecture utilizes narrowband LNAs with a current-reusing technique using a 28-nm low-power complementary metal-oxide-semiconductor (CMOS) technology. The proposed receiver with this single-ended narrowband LNA can handle up to three carrier components (CCs) CA. The second receiver architecture shows wideband characteristics and employs current-efficient and high linear wideband LNAs. This proposed design can support up to five CC CA and is implemented in a 14-nm Fin field-effect-transistor CMOS technology. Moreover, frequency-band switchable transformers are utilized in both designs to realize size-efficient receivers. Both proposed receivers operate at a frequency ranging from 0.6 to 2.7 GHz. The implemented narrowband and wideband receivers have conversion gains exceeding 70 and 62 dB, and achieve noise figures of less than 3.5 and 5 dB during all CA scenarios, respectively. The proposed receivers operate at a nominal supply of 1.2 and 1.0 V for 28 and 14-nm CMOS technologies, respectively.
引用
收藏
页码:452 / 468
页数:17
相关论文
共 33 条
[1]   Modified derivative superposition method for linearizing FET low-noise amplifiers [J].
Aparin, V ;
Larson, LE .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :571-581
[2]  
Atalla ES, 2013, MIDWEST SYMP CIRCUIT, P1132, DOI 10.1109/MWSCAS.2013.6674852
[3]  
Chang L., 2014, U.S. Patent, Patent No. [2014 0 072 001 A1, 20140072001]
[4]   Second-Order Intermodulation in Current-Commutating Passive FET Mixers [J].
Chehrazi, Saeed ;
Mirzaei, Ahmad ;
Abidi, Asad A. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2009, 56 (12) :2556-2568
[5]   Reconfigurable Receiver With Radio-Frequency Current-Mode Complex Signal Processing Supporting Carrier Aggregation [J].
Chen, Run ;
Hashemi, Hossein .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (12) :3032-3046
[6]  
Chiu CS, 2017, ISSCC DIG TECH PAP I, P130, DOI 10.1109/ISSCC.2017.7870295
[7]   A SAW-Less Receiver Front-End Employing Body-Effect Control IIP2 Calibration [J].
Han, Junghwan ;
Kwon, Kuduck .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (09) :2691-2698
[8]  
Harrison J, 2003, ISSCC DIG TECH PAP I, V46, P132
[9]  
Holma H., 2011, LTE UMTS EVOLUTION L
[10]   An RF Receiver for Intra-Band Carrier Aggregation [J].
Hwu, Sy-Chyuan ;
Razavi, Behzad .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (04) :946-961