Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

被引：23
作者：
Zhang, YC
Huang, CJ
Liu, FQ
Xu, B
Ding, D
Jiang, WH
Li, YF
Ye, XL
Wu, J
Chen, YH
Wang, ZG
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 219卷 / 03期
基金：
中国国家自然科学基金;
关键词：
quantum dots; InAs/GaAs; MBE; photoluminescence; absorption;
D O I：
10.1016/S0022-0248(00)00669-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：199 / 204
页数：6
相关论文
共 20 条
[1]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[2]  
Bödefeld MC, 1999, APPL PHYS LETT, V74, P1839, DOI 10.1063/1.123686
[3]   Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots [J].
Brusaferri, L ;
Sanguinetti, S ;
Grilli, E ;
Guzzi, M ;
Bignazzi, A ;
Bogani, F ;
Carraresi, L ;
Colocci, M ;
Bosacchi, A ;
Frigeri, P ;
Franchi, S .
APPLIED PHYSICS LETTERS, 1996, 69 (22) :3354-3356
[4]   Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots [J].
Chu, L ;
Arzberger, M ;
Zrenner, A ;
Böhm, G ;
Abstreiter, G .
APPLIED PHYSICS LETTERS, 1999, 75 (15) :2247-2249
[5]   Electronic structure of InAs/GaAs self-assembled quantum dots [J].
Cusack, MA ;
Briddon, PR ;
Jaros, M .
PHYSICAL REVIEW B, 1996, 54 (04) :R2300-R2303
[6]  
Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118
[7]   Temperature dependent optical properties of self-organized InAs GaAs quantum dots [J].
Heitz, R ;
Mukhametzhanov, I ;
Madhukar, A ;
Hoffmann, A ;
Bimberg, D .
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) :520-527
[8]   Photoluminescence study of in situ annealed InAs quantum dots:: Double-peak emission associated with bimodal size distribution [J].
Lee, H ;
Lowe-Webb, R ;
Johnson, TJ ;
Yang, WD ;
Sercel, PC .
APPLIED PHYSICS LETTERS, 1998, 73 (24) :3556-3558
[9]   Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].
Lee, SW ;
Hirakawa, K ;
Shimada, Y .
APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430
[10]   DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
REAVES, CM ;
DENBAARS, SP ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205
12