MAGFET based current sensing for power integrated circuit

A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 mum BiCMOS ALCATEL technology. to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor. implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT. (C) 2003 Elsevier Science Ltd. All rights reserved.