About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

被引：56

作者：

Reimann, C. ^{[1
,2
]}

Trempa, M. ^{[1
]}

Friedrich, J. ^{[1
,2
]}

Mueller, G. ^{[1
,3
]}

机构：

[1] Fraunhofer Inst IISB, Dept Crystal Growth, D-91058 Erlangen, Germany

[2] Fraunhofer THM, D-09599 Freiberg, Germany

[3] Crystal Consulting, D-91094 Langensendelbach, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 09期

关键词：

Directional solidification; Impurities; Mass transfer; Vertical gradient freeze; Multi-crystalline silicon; Solar cells; MULTICRYSTALLINE SILICON; SEMICONDUCTOR SILICON; SI3N4; INCLUSIONS; IMPURITIES; NITROGEN; DEFECTS; OXYGEN;

D O I：

10.1016/j.jcrysgro.2010.02.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Multi-crystalline silicon ingots with a diameter of 6 cm and a height of 4-5 cm were directionally solidified in a laboratory scale crystal growth facility within a Si(3)N(4)-coated fused silica crucible with a growth rate of 1 cm/h for two different conditions of convective transport in the melt. The feedstock quality was varied from "pure" (electronic grade) to highly carbon-contaminated and highly nitrogen-contaminated. It will be demonstrated that under certain convective process conditions even for a highly contaminated feedstock (C and N) a mc silicon ingot can be grown which has an axially and radially homogenous carbon and nitrogen concentration in the range 3-4 x 10(17) C-atoms/cm(3) and 2-4 x 10(15) N-atoms/cm(3), respectively, and is free of SiC- and Si(3)N(4)-precipitates in the bulk. (C) 2010 Elsevier BM. All rights reserved.

引用

页码：1510 / 1516

页数：7

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