Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films

被引：32

作者：

Yang, A. L. ^{[1
]}

Song, H. P. ^{[1
]}

Liang, D. C. ^{[1
]}

Wei, H. Y. ^{[1
]}

Liu, X. L. ^{[1
]}

Jin, P. ^{[1
]}

Qin, X. B. ^{[2
]}

Yang, S. Y. ^{[1
]}

Zhu, Q. S. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

基金：

美国国家科学基金会;

关键词：

alloying; annealing; electrical conductivity; excitons; II-VI semiconductors; magnesium compounds; MOCVD coatings; photoluminescence; positron annihilation; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; zinc compounds; EMISSION; ORIGIN;

D O I：

10.1063/1.3394012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li [Appl. Phys. Lett. 91, 232115 (2007)].

引用

页数：3

共 22 条

[1] Structural and optical properties of single crystal Zn1-xMgxO nanorods -: Experimental and theoretical studies [J].

Chang, Yu-Sheng ;

Chien, Chih-Tao ;

Chen, Chun-Wei ;

Chu, Ta-Ya ;

Chiang, Hsuen-Han ;

Ku, Chen-Hao ;

Wu, Jih-Jen ;

Lin, Chao-Sung ;

Chen, Li-Chyong ;

Chen, Kuei-Hsien .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)

[2] Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation [J].

Chen, Z. Q. ;

Betsuyaku, K. ;

Kawasuso, A. .

PHYSICAL REVIEW B, 2008, 77 (11)

[3] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[4] Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy [J].

Jung, YS ;

Choi, WK ;

Kononenko, OV ;

Panin, GN .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

[5] Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire [J].

Laukkanen, P ;

Lehkonen, S ;

Uusimaa, P ;

Pessa, M ;

Oila, J ;

Hautakangas, S ;

Saarinen, K ;

Likonen, J ;

Keränen, J .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) :786-792

[6] Realization of p-type conduction in undoped MgxZn1-xO thin films by controlling Mg content [J].

Li, Y. F. ;

Yao, B. ;

Lu, Y. M. ;

Wei, Z. P. ;

Gai, Y. Q. ;

Zheng, C. J. ;

Zhang, Z. Z. ;

Li, B. H. ;

Shen, D. Z. ;

Fan, X. W. ;

Tang, Z. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[7] POSITRON TRAPPING AT DIVACANCIES IN THIN POLYCRYSTALLINE CDTE-FILMS DEPOSITED ON GLASS [J].

LISZKAY, L ;

CORBEL, C ;

BAROUX, L ;

HAUTOJARVI, P ;

BAYHAN, M ;

BRINKMAN, AW ;

TATARENKO, S .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1380-1382

[8] Origin of the near-band-edge luminescence in MgxZn1-xO alloys [J].

Mueller, Alexander ;

Stoelzel, Marko ;

Dietrich, Christof ;

Benndorf, Gabriele ;

Lorenz, Michael ;

Grundmann, Marius .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)

[9] Origin of luminescence from InGaN diodes [J].

O'Donnell, KP ;

Martin, RW ;

Middleton, PG .

PHYSICAL REVIEW LETTERS, 1999, 82 (01) :237-240

[10] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

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