A 10-bit 1-GSample/s Nyquist current-steering CMOS D/A converter

被引:16
作者
Van den Bosch, A [1 ]
Borremans, M [1 ]
Steyaert, M [1 ]
Sansen, W [1 ]
机构
[1] Katholieke Univ Leuven, Dept Elect Engn, ESAT, MICAS, B-3001 Heverlee, Belgium
来源
PROCEEDINGS OF THE IEEE 2000 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2000年
关键词
D O I
10.1109/CICC.2000.852663
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a 10 bit 1 GS/s current-steering CMOS D/A converter is presented. The measured INL is better than +/-0.2 LSB. The 1 GS/s conversion rate has been obtained by a fully custom designed thermometer decoder. The dynamic limitations have been solved, resulting in more than 61 dB measured SFDR in the interval from DC to Nyquist at all conversion rates up to 1 GS/s. At this conversion rate, the power consumption equals 110 mW. The chip has been processed in a standard 0.35 mu m CMOS technology and has an active area of only 0.35 mm(2).
引用
收藏
页码:265 / 268
页数:4
相关论文
共 8 条
[1]   A 10-b, 500-MSample/s CMOS DAC in 0.6 mm2 [J].
Lin, CH ;
Bult, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :1948-1958
[2]  
MARQUES A, 1998, P IEEE 1998 INT SOL, P216
[3]   A 10-B 70-MS/S CMOS D/A CONVERTER [J].
NAKAMURA, Y ;
MIKI, T ;
MAEDA, A ;
KONDOH, H ;
YAZAWA, N .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (04) :637-642
[4]   MATCHING PROPERTIES OF MOS-TRANSISTORS [J].
PELGROM, MJM ;
DUINMAIJER, ACJ ;
WELBERS, APG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) :1433-1440
[5]  
Razavi B., 1995, PRINCIPLES DATA CONV
[6]   A 12 bit 200 MHz low glitch CMOS D/A converter [J].
Van den Bosch, A ;
Borremans, M ;
Vandenbussche, J ;
Van der Plas, G ;
Marques, A ;
Bastos, J ;
Steyaert, M ;
Gielen, G ;
Sansen, W .
IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, :249-252
[7]  
VANDENBOSCH A, 1999, P IEEE INT C EL CIRC, P1193
[8]  
VANDENBUSSCHE J, 1999, P ISSCC FEB, P146