Advanced Wet Clean Technology at Lightly Doped Drain Layers in FinFET
被引:2
作者:
Li, Jian
论文数: 0引用数: 0
h-index: 0
机构:
GLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USAGLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USA
Li, Jian
[1
]
Sih, Vincent
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h-index: 0
机构:
GLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USAGLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USA
Sih, Vincent
[1
]
Zhan, Hui
论文数: 0引用数: 0
h-index: 0
机构:
GLOBALFOUNDRIES, Proc Integrat & Yield Engn, New York, NY 12020 USAGLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USA
Zhan, Hui
[2
]
机构:
[1] GLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USA
[2] GLOBALFOUNDRIES, Proc Integrat & Yield Engn, New York, NY 12020 USA
来源:
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14
|
2016年
/
75卷
/
05期
关键词:
D O I:
10.1149/07505.0185ecst
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
An advanced wet clean method to utilize piezoelectric nozzle head for fine-controlled dual-fluid sprays based on single wafer clean toolset was demonstrated on FinFET production wafers that surface particles were reduced by as much as 26% without sacrifice of gate pattern damage in sensitive lightly doped drain layers. Additionally, about 5% yield improvement was observed for using the new clean method. The fine-controlled dual-fluid sprays improved the cleaning efficiency significantly in the "physicochemical" way and reduced the potential for pattern damage caused by variations in liquid droplet size and velocity.
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页码:185 / 190
页数:6
相关论文
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Bowling R.A., 1988, PARTICLES SURFACES, P129, DOI DOI 10.1007/978-1-4615-9531-1_10
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Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
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Miyachi, Keiji
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Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
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Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
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Kyushu Univ, Dept Mech Engn, Fac Engn, Nishi Ku, Fukuoka 8190395, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
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Doi, Toshiro
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h-index: 0
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Kyushu Univ, Dept Mech Engn, Fac Engn, Nishi Ku, Fukuoka 8190395, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
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Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Seike, Yoshiyuki
Miyachi, Keiji
论文数: 0引用数: 0
h-index: 0
机构:
Asahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Kyushu Univ, Dept Mech Engn, Fac Engn, Nishi Ku, Fukuoka 8190395, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Miyachi, Keiji
Shibata, Tatsuo
论文数: 0引用数: 0
h-index: 0
机构:
Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Shibata, Tatsuo
Kobayashi, Yoshinori
论文数: 0引用数: 0
h-index: 0
机构:
Asahi Sunac Corp, New Components Div, Aichi 4888688, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Kobayashi, Yoshinori
Kurokawa, Syuhei
论文数: 0引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Mech Engn, Fac Engn, Nishi Ku, Fukuoka 8190395, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan
Kurokawa, Syuhei
Doi, Toshiro
论文数: 0引用数: 0
h-index: 0
机构:
Kyushu Univ, Dept Mech Engn, Fac Engn, Nishi Ku, Fukuoka 8190395, JapanAsahi Sunac Corp, New Components Div, Aichi 4888688, Japan