Advanced Wet Clean Technology at Lightly Doped Drain Layers in FinFET

被引:2
作者
Li, Jian [1 ]
Sih, Vincent [1 ]
Zhan, Hui [2 ]
机构
[1] GLOBALFOUNDRIES, Adv Module Engn, New York, NY 12020 USA
[2] GLOBALFOUNDRIES, Proc Integrat & Yield Engn, New York, NY 12020 USA
来源
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14 | 2016年 / 75卷 / 05期
关键词
D O I
10.1149/07505.0185ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
An advanced wet clean method to utilize piezoelectric nozzle head for fine-controlled dual-fluid sprays based on single wafer clean toolset was demonstrated on FinFET production wafers that surface particles were reduced by as much as 26% without sacrifice of gate pattern damage in sensitive lightly doped drain layers. Additionally, about 5% yield improvement was observed for using the new clean method. The fine-controlled dual-fluid sprays improved the cleaning efficiency significantly in the "physicochemical" way and reduced the potential for pattern damage caused by variations in liquid droplet size and velocity.
引用
收藏
页码:185 / 190
页数:6
相关论文
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