Laser annealing of Al implanted silicon carbide: Structural and optical characterization

被引：16
作者：
Boutopoulos, C.
Terzis, P.
Zergioti, I.
Kontos, A. G.
Zekentes, K.
Giannakopoulos, K.
Raptis, Y. S.
机构：
[1] NTUA, Dept Phys, Athens 15780, Greece
[2] IESL, Fdn Res & Technol Hellas, Iraklion 71110, Crete, Greece
[3] Natl Ctr Sci Res, Inst Mat Sci, Athens 15310, Greece
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 19期
关键词：
Nd : YAG laser; Al-doped 4H-SiC surface; XeCl excimer laser; electronic and optoelectronic devices; UV laser irradiation;
D O I：
10.1016/j.apsusc.2007.02.070
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：7912 / 7916
页数：5
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