The influence of substrate surface polarity on optical properties of GaN grown on single crystal bulk AlN

被引：0

作者：

Tamulaitis, G ^{[1
]}

Yilmaz, I ^{[1
]}

Shur, MS ^{[1
]}

Gaska, R ^{[1
]}

Chen, C ^{[1
]}

Yang, J ^{[1
]}

Kuokstis, E ^{[1
]}

Khan, A ^{[1
]}

Rojo, JC ^{[1
]}

Schowalter, LJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept ECE & CIE, Troy, NY 12180 USA

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence of the GaN layers grown both on N-face and Al-face bulk AIN is studied under CW and pulsed laser excitation in the temperature range from 8 K to 300 K. We compare localization of excitons, residual strain, and activation energies for thermally activated transfer of carriers to nonradiative recombination. At high excitation intensities, conditions for carrier heating, which is important for the threshold of stimulated emission, are also investigated.

引用

页码：193 / 199

页数：7

共 15 条

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