Physical chemistry of the femtosecond and nanosecond laser-material interaction with SiC and a SiC-TiC-TiB2 composite ceramic compound

被引：48

作者：

Rudolph, P ^{[1
]}

Brzezinka, KW ^{[1
]}

Wäsche, R ^{[1
]}

Kautek, W ^{[1
]}

机构：

[1] Fed Inst Mat Res & Testing, D-12205 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2003年 / 208卷

关键词：

feratosecond techniques; nanosecond techniques; ceramics; Raman spectra/condensed matter; XPS/surface analysis;

D O I：

10.1016/S0169-4332(02)01356-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the semiconductor SiC and the composite compound SiC-TiC-TiB2 was investigated. Surface analytical techniques, such as XPS, depth profile (DP), and micro-Raman spectroscopy (mu-RS) were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. Crystal structure changes were observed as a consequence of laser-induced melting and resolidification. In air contact all components underwent oxidation reactions according to thermodynamic expectations. Exceptions were observed under exclusion of oxygen, SiC was reduced to elemental Si. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：285 / 291

页数：7

共 19 条

[1] THE USE OF A CHARGE-COUPLED DEVICE AND POSITION-SENSITIVE RESISTIVE ANODE DETECTOR FOR MULTIORDER SPONTANEOUS RAMAN-SPECTROSCOPY FROM SILICON [J].