Theory of electroluminescence intensity and insights into recombination in thin film solar cells

被引：10

作者：

Brown, Gregory ^{[1
]}

Faifer, Vladimir ^{[1
]}

Cardozo, Ben ^{[1
]}

Bykov, Eugene ^{[1
]}

Contreras, Miguel ^{[2
]}

机构：

[1] Nanosolar Inc, San Jose, CA 95138 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

copper compounds; electroluminescence; gallium compounds; indium compounds; semiconductor devices; solar cells; ternary semiconductors; thin film devices; CU(IN; GA)SE-2; PERFORMANCE; DEFECTS;

D O I：

10.1063/1.3443637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Equations describing the electroluminescence (EL) intensity as a function of material properties are derived for thin film solar cells and experimentally validated using Cu(In,Ga)Se(2) solar cells. EL intensity at constant voltage is controlled by the electronic properties of the neutral bulk even when the diode current is controlled by recombination in the space charge region. Using a combination of techniques, it is found that recombination in the quasineutral bulk does not correlate with recombination in the space charge region. Differences between EL measurements on thin film cells and crystalline silicon cells are discussed including the effects of secondary barriers. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3443637]

引用

页数：3

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