Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin films

被引：3
作者：
Shen, Bowen [1 ,2 ]
Wang, Jing [1 ]
Pan, Hao [3 ,4 ]
Chen, Jiahui [3 ,4 ]
Wu, Jialu [3 ,4 ]
Chen, Mingfeng [3 ,4 ]
Zhao, Ruixue [3 ,4 ]
Zhu, Kongjun [1 ]
Qiu, Jinhao [1 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Coll Aerosp Engn, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Jiangsu, Peoples R China
[2] Nanjing Univ Aeronaut & Astronaut, Sch Mat Sci & Engn, Nanjing 210016, Jiangsu, Peoples R China
[3] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[4] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 19期
基金：
中国国家自然科学基金;
关键词：
SOL-GEL PROCESS; LEAD MAGNESIUM NIOBATE; DIELECTRIC-PROPERTIES; EXCESS PB; PB(MG1/3NB2/3)O-3-PBTIO3; PMN; PHASE; GROWTH; MEMS; SI;
D O I：
10.1007/s10854-018-9795-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (PMN-PT) thin films were deposited on (111)Pt/Ti/SiO2/Si substrates via the chemical solution deposition. Both of the annealing process and additive methanamide play an obvious part in the structure and electrical properties of PMN-PT films. The optimized high-qualitied PMN-PT thin film in present work is fabricated with the methanamide in the precursor and annealed at 650 A degrees C for 20 min. The film exhibits pure perovskite phase and superior ferroelectricity. The saturation polarization P (s) and remanent polarization P (r) are 52.1 A mu C/cm(2) and 18.7 A mu C/cm(2) at 500 kV/cm with 1000 Hz. It also shows low leakage current density of approximately 1.0 x 10(- 8) A/cm(2) at 200 kV/cm.
引用
收藏
页码：16997 / 17002
页数：6
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