Tunable electrical and optical properties of hafnium nitride thin films

被引:27
作者
Farrell, I. L. [1 ]
Reeves, R. J. [1 ]
Preston, A. R. H. [2 ]
Ludbrook, B. M. [2 ]
Downes, J. E. [3 ]
Ruck, B. J. [2 ]
Durbin, S. M. [4 ]
机构
[1] Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand
[2] Victoria Univ, Sch Chem & Phys Sci, Wellington 6140, New Zealand
[3] Macquarie Univ, Dept Phys & Engn, N Ryde, NSW 2109, Australia
[4] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 8140, New Zealand
关键词
band structure; hafnium compounds; plasma materials processing; pulsed laser deposition; thin films; X-ray absorption spectra; LAYERS;
D O I
10.1063/1.3327329
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.
引用
收藏
页数:3
相关论文
共 50 条
[41]   Electrical, optical and structural properties of copper aluminium diselenide thin films [J].
Joseph, CM ;
Menon, CS .
SOLID STATE PHENOMENA, 1997, 55 :226-229
[42]   Optical and electrical properties of holmium thin films as a function of hydrogen concentration [J].
Azofeifa, D. E. ;
Vargas, W. E. ;
Clark, N. ;
Solis, H. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 446 :522-525
[43]   Electrical and optical properties of CZTS thin films prepared by SILAR method [J].
Henry, J. ;
Mohanraj, K. ;
Sivakumar, G. .
JOURNAL OF ASIAN CERAMIC SOCIETIES, 2016, 4 (01) :81-84
[44]   The Structural, optical and electrical properties of nanocrystalline ZnO:Al thin films [J].
Benhaoua, Boubaker ;
Rahal, Achour ;
Benramache, Said .
SUPERLATTICES AND MICROSTRUCTURES, 2014, 68 :38-47
[45]   Hydrogen influence on the electrical and optical properties of ZnO thin films grown under different atmospheres [J].
Lorite, I. ;
Wasik, J. ;
Michalsky, T. ;
Schmidt-Grund, R. ;
Esquinazi, P. .
THIN SOLID FILMS, 2014, 556 :18-22
[46]   Electrical, optical properties and structure characterization of In-doped copper nitride thin film [J].
Du Yun ;
Lu Nian-Peng ;
Yang Hu ;
Ye Man-Ping ;
Li Chao-Rong .
ACTA PHYSICA SINICA, 2013, 62 (11)
[47]   The influence of annealing on the electrical and optical properties of Silicon-rich Silicon Nitride Films [J].
Czarnacka, Karolina ;
Komarov, F. F. .
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2016, 2016, 10031
[48]   Improving electrical conductivity and wear resistance of hafnium nitride films via tantalum incorporation [J].
Gao, Jing ;
Zhao, Yue ;
Gu, Zhiqing ;
Zhang, Sam ;
Wen, Mao ;
Wu, Lulu ;
Zheng, Weitao ;
Hu, Chaoquan .
CERAMICS INTERNATIONAL, 2017, 43 (11) :8517-8524
[49]   Electrical properties of amorphous aluminum oxide thin films [J].
Katiyar, P ;
Jin, C ;
Narayan, RJ .
ACTA MATERIALIA, 2005, 53 (09) :2617-2622
[50]   Optical properties, structural parameters, and bonding of highly textured rocksalt tantalum nitride films [J].
Matenoglou, G. M. ;
Koutsokeras, L. E. ;
Lekka, Ch. E. ;
Abadias, G. ;
Camelio, S. ;
Evangelakis, G. A. ;
Kosmidis, C. ;
Patsalas, P. .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)