Tunable electrical and optical properties of hafnium nitride thin films

被引：27
作者：
Farrell, I. L. [1 ]
Reeves, R. J. [1 ]
Preston, A. R. H. [2 ]
Ludbrook, B. M. [2 ]
Downes, J. E. [3 ]
Ruck, B. J. [2 ]
Durbin, S. M. [4 ]
机构：
[1] Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand
[2] Victoria Univ, Sch Chem & Phys Sci, Wellington 6140, New Zealand
[3] Macquarie Univ, Dept Phys & Engn, N Ryde, NSW 2109, Australia
[4] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 8140, New Zealand
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期
关键词：
band structure; hafnium compounds; plasma materials processing; pulsed laser deposition; thin films; X-ray absorption spectra; LAYERS;
D O I：
10.1063/1.3327329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.
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页数：3
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