Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

被引：10

作者：

Tomm, JW

Bärwolff, A

Elsaesser, T

Luft, J

机构：

[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany

[2] OSRAM Opto Semicond, D-93049 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mounting-induced defects in semiconductor quantum-well (QW) lasers are investigated by photocurrent spectroscopy. The defects are located in the laser waveguides and give rise to an absorption band below the QW band gap with a maximum absorption cross section of sigma=2 x 10(-15) cm(2). We observe a nonlinear fully reversible photobleaching of the defects and a resulting increase of QW photocurrent upon continuous wave irradiation of the devices, demonstrating a direct interaction between quantum-confined carriers and a defect level. (C) 2000 American Institute of Physics, [S0003-6951(00)01731-9].

引用

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页码：747 / 749

页数：3

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