Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

被引：19

作者：

Fang, Wen ^{[1
,2
,3
,4
]}

Veloso, Anabela ^{[1
]}

Simoen, Eddy ^{[1
]}

Cho, Moon-Ju ^{[1
]}

Collaert, Nadine ^{[1
]}

Thean, Aaron ^{[1
]}

Luo, Jun ^{[3
]}

Zhao, Chao ^{[3
]}

Ye, Tianchun ^{[3
]}

Claeys, Cor ^{[1
,5
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Dept Elect Engn, B-3001 Leuven, Belgium

[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Techno, Beijing 100029, Peoples R China

[4] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China

[5] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

关键词：

1/f noise; effective work function; metal gate; oxide trap density; INVERSION; MOSFETS;

D O I：

10.1109/LED.2016.2530849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of the effective work function (EWF) gate metal on the low-frequency noise behavior of n-type gate-all-around nanowire (NW) FETs has been investigated. A clear reduction of the noise power spectral density has been observed for n-type TiAl-based EWF-metal gate NWFETs, indicating a reduction of the oxide trap density in the high-kappa dielectric. The difference in the observed trap density profiles for both types of devices can be explained by a beneficial impact of the presence of Al on the trap density in the underlying HfO2. The lower oxide trap density also explains the improvement of the maximum transconductance by similar to 20% in the TiAl-based devices.

引用

页码：363 / 365

页数：3

共 22 条

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