Integrated photonics using asymmetric twin-waveguide structures

被引:7
作者
Forrest, SR [1 ]
Gokhale, MR [1 ]
Studenkov, PV [1 ]
Xia, FN [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA
来源
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年
关键词
D O I
10.1109/ICIPRM.2000.850218
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a number of integrated photonic devices using a twin-waveguide (TG) based technique. The asymmetric TG structure has vertically stacked active and passive waveguides grown in a single epitaxial growth step. All integrated components are defined by post-growth patterning, and tapered mode transformers provide efficient coupling between active and passive sections. Devices made from the same base wafer include single-frequency DBR lasers, semiconductor optical amplifiers and electroabsorption modulators integrated with passive components such as 3dB couplers, grating sections and Mach-Zehnder interferometers.
引用
收藏
页码:13 / 16
页数:4
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