2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS
|
2000年
关键词:
D O I:
10.1109/ICIPRM.2000.850218
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We demonstrate a number of integrated photonic devices using a twin-waveguide (TG) based technique. The asymmetric TG structure has vertically stacked active and passive waveguides grown in a single epitaxial growth step. All integrated components are defined by post-growth patterning, and tapered mode transformers provide efficient coupling between active and passive sections. Devices made from the same base wafer include single-frequency DBR lasers, semiconductor optical amplifiers and electroabsorption modulators integrated with passive components such as 3dB couplers, grating sections and Mach-Zehnder interferometers.