Study of quantum point contact via low temperature scanning gate microscopy

被引：14

作者：

Aoki, N. ^{[1
]}

Burke, A.

Da Cunha, C. R.

Akis, R.

Ferry, D. K.

Ochiai, Y.

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Chiba Univ, Dept Elect & Mech Engn, Chiba 2638522, Japan

来源：

SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 | 2006年 / 38卷

关键词：

D O I：

10.1088/1742-6596/38/1/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two types of quantum point contacts have been studied by low temperature scanning gate microscopy. In addition to the usual bright spot, which corresponds to a large conductance change at the constriction, ring structures are observed near the center of the quantum point contact. The ring diameter shrinks with increasing base conductance when the side gate voltage is changed. The rings are thought to relate to the observation of impurity potentials in the constriction region.

引用

页码：79 / 82

页数：4

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