Growth of alloy GaInP crystals by compositional conversion of InP layers grown on GaP substrates in an LPE system

GaInP alloy layers with desired compositions were grown on GaP substrates using the compositional conversion technique. An InP layer grown on a GaP substrate was brought into contact with a Ga-In-P saturated solution and kept at a constant temperature in isothermal conditions. A relatively good GaInP layer was obtained. Furthermore, to have a better understanding of this mechanism, a solid-liquid diffusion numerical simulation model was applied. Numerical solutions agree with experimental results and explain well the conversion phenomenon.