Analytical approach to SF6 breakdown under transient conditions

被引：8

作者：

Boggs, S ^{[1
]}

Uchii, T

Nishiwaki, S

机构：

[1] Univ Connecticut, Dept Elect Engn, Elect Insulat Res Ctr, Storrs, CT 06269 USA

[2] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA

[3] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON, Canada

[4] TM T&D Corp, Transmiss & Distribut Res & Dev Ctr, Kawasaki, Kanagawa 2100682, Japan

来源：

IEEE TRANSACTIONS ON POWER DELIVERY | 2003年 / 18卷 / 03期

关键词：

breakdown; gaseous dielectrics; GIS; SF6;

D O I：

10.1109/TPWRD.2003.813876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Under many circumstances, the initiation of breakdown can be viewed as conversion of energy stored in the electric field (capacitive energy) to thermal energy which converts matter in a. thin channel from a nonconducting state to a conducting plasma. This paper analyzes this process in the context of breakdown in SF6 as a prelude to future papers which treat the subject of breakdown under highly inhomogemous thermal field, quasihomogeneous electric Held conditions.

引用

页码：751 / 757

页数：7

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