Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

被引：21

作者：

Jia, C. H. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhou, X. L. ^{[1
]}

Yang, A. L. ^{[1
]}

Zheng, G. L. ^{[1
]}

Liu, X. L. ^{[1
]}

Yang, S. Y. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 02期

基金：

中国国家自然科学基金;

关键词：

BATIO3; SRTIO3;

D O I：

10.1007/s00339-010-5599-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.

引用

页码：511 / 514

页数：4

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