GHz FBAR AND SAW RESONATORS MANUFACTURED ON GaN/Si

被引：0

作者：

Muller, A. ^{[1
]}

Neculoiu, D. ^{[1
]}

Konstantinidis, G. ^{[2
]}

Vasilache, D. ^{[1
]}

Dinescu, A. ^{[1
]}

Stavrinidis, A. ^{[2
]}

Deligiorgis, G. ^{[2
]}

Danila, M. ^{[1
]}

Tzagaraki, K. ^{[2
]}

Cismaru, A. ^{[1
]}

Buiculescu, C. ^{[1
]}

Petrini, I. ^{[1
]}

Muller, A. A. ^{[1
]}

Dascalu, D. ^{[1
]}

机构：

[1] IMT Bucharest, 32B Erou Iancu Nicolae Str, Bucharest 077190, Romania

[2] FORTH IESL MRG Heraklion, Iraklion, Greece

来源：

CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2009年

关键词：

piezoelectric materials; resonators; micromachining; membrane; microwave; nano-processing; gallium nitride;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the manufacturing and the microwave characterization of FBAR and SAW type resonators on GaN thin films grown on a high resistivity (111) oriented silicon subnstrste. The resonators have been manufactured using advanced micromachining technologies (for the FBAR structures)and nanolithographic techniques (for the IDT of the SAW structure). FBAR structures working at frequencies higher then 5 GHz have been obtained. For the SAW type structures a resonance at 4.8 GHz has been obtained fir 250nm lingers series connection of the SAWs, and 7.1 GHz fir 100-150nm fingers face to face SAW structures.

引用

页码：319 / +

页数：2

共 15 条

[1] Preparation of highly oriented aluminum nitride thin films on molybdenum bottom electrodes using metal interlayers
Akiyama, M
Ueno, N
Tateyama, H
Nagao, K
Yamada, T
[J]. JOURNAL OF MATERIALS SCIENCE, 2005, 40 (05) : 1159 - 1162
[2] Gas Sensitivity Comparison of Polymer Coated SAW and STW Resonators Operating at the Same Acoustic Wave Length
Avramov, Ivan D.
Rapp, Michael
Kurosawa, Shigeru
Krawczak, Piotr
Radeva, Ekaterina Ivanova
[J]. IEEE SENSORS JOURNAL, 2002, 2 (03) : 150 - 159
[3] Real-time imaging of acoustic waves on a bulk acoustic resonator
Fujikura, Takashi
Matsuda, Osamu
Profunser, Dieter M.
Wright, Oliver B.
Masson, Jeremy
Ballandras, Sylvain
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (26)
[4] The characteristics of surface acoustic waves on AIN/LiNbO3 substrates
Kao, KS
Cheng, CC
Chen, YC
Lee, YH
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (07): : 1125 - 1127
[5] 5 GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography
Kirsch, P.
Assouar, M. B.
Elmazria, O.
Mortet, V.
Alnot, P.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (22)
[6] Bandpass filters for 8 GHz using solidly mounted bulk acoustic wave resonators
Lanz, R
Muralt, P
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2005, 52 (06) : 936 - 946
[7] GaN micromachined FBAR structures for microwave applications
Muller, A.
Neculoiu, D.
Vasilache, D.
Dascalu, D.
Konstantinidis, G.
Kosopoulos, A.
Adikimenakis, A.
Georgakilas, A.
Mutamba, K.
Sydlo, C.
Hartnagel, H. L.
Dadgar, A.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 426 - 431
[8] MULLER A, 2009, IEEE ELECT IN PRESS
[9] Neculoiu D, 2007, IEEE MTT S INT MICR, P876
[10] Submicron technology for III-nitride semiconductors
Palacios, T
Calle, F
Monroy, E
Muñoz, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2071 - 2074

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