Photochemical process of divalent germanium responsible for photorefractive index change in GeO2-SiO2 glasses

被引:6
作者
Takahashi, M [1 ]
Sakoh, A
Tokuda, Y
Yoko, T
Nishii, J
Nishiyama, H
Miyamoto, I
机构
[1] Kyoto Univ, Chem Res Inst, Lab Amorphous Mat, Kyoto 6110011, Japan
[2] Natl Inst Adv Ind Sci & Technol, Ikeda, Osaka 5638577, Japan
[3] Osaka Univ, Grad Sch Engn, Dept Mfg Sci, Suita, Osaka 5650871, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
关键词
D O I
10.1016/j.jnoncrysol.2004.08.037
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The photoluminescence spectra of the divalent Ge(Ge2+) center in GeO2-SiO2 glasses with different photosensitivities were investigated by means of excitation-emission energy mapping to correlate the ultraviolet light induced photorefractivity with the local structure around the Ge2+ centers. The glasses with a larger photorefractivity tended to exhibit a greater band broadening of the singlet-singlet transition to higher excitation energies accompanied by an increase in the Stokes shifts. This strongly suggests the existence of a highly photosensitive Ge2+ centers with higher excitation energies. It was also found that the introduction of a hydroxyl group or boron species modifies the local environment of Ge2+ leading to an enhanced photorefractivity. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 327
页数:5
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