An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

被引：2

作者：

Chien, Yu-Chieh ^{[1
]}

Londono-Ramirez, Horacio ^{[2
,3
]}

Kuo, Chuan-Wei ^{[4
]}

Tsao, Yu-Ching ^{[5
]}

Nag, Manoj ^{[2
]}

Chang, Ting-Chang ^{[5
]}

Ang, Kah-Wee ^{[1
,6
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Neurosci, B-3000 Leuven, Belgium

[4] Natl Sun Yat Sen Univ, Dept Mat & Optoelect, Kaohsiung 80424, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[6] ASTAR, Inst Mat Res & Engn, Singapore 138634, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Field effect transistors; Iron; Parameter extraction; Logic gates; Semiconductor device measurement; Threshold voltage; Semiconductor device modeling; Contact resistance; effective channel length; field effect mobility; parameter extraction; threshold voltage; THIN-FILM TRANSISTORS; THRESHOLD VOLTAGE; SERIES RESISTANCE; MOBILITY; CRYSTALLINE; MODEL;

D O I：

10.1109/TED.2021.3072878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage (V-T), effective channel length (L-eff), source-drain series resistance (R-SD), and intrinsic effective mobility (mu(int)). An analytical expression of effective mobility (mu(eff)) is implemented with the consideration of percolation conduction and R-SD effects. This method relies on the concept of Y-function method and the channel length dependent measurement. The extraction results are compared to those from the combination of transfer length method (TLM). It has been shown that a better accuracy of the extracted parameters is achieved with the proposed method. Furthermore, transfer characteristics are resimulated based on the extracted parameters, in which a good match between measurement and simulation is obtained.

引用

页码：2717 / 2722

页数：6

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