Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias

被引：0

作者：

Furuta, Mamoru ^{[1
]}

Hiramatsu, Takahiro ^{[1
]}

Hirao, Takashi ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

HYDROGENATED AMORPHOUS-SILICON; HIGH-DENSITY; GROWTH; PERFORMANCE;

D O I：

10.1143/JJAP.49.050202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microcrystalline silicon (mu c-Si) films were deposited by inductively coupled plasma chemical vapor deposition with a low-frequency and low-duty pulse substrate bias (PSB). The crystallinity of the films was significantly improved by the PSB. In the case of the low-frequency and low-duty PSB, the duty ratio affected the crystallinity more than the negative peak voltage. Cross-sectional transmission electron microscopy measurements revealed that the nucleation density at the mu c-Si/glass interface was increased by the PSB. This technique will be useful in fabricating high-performance bottom-gate mu c-Si thin-film transistors for large-area electronics. (C) 2010 The Japan Society of Applied Physics

引用

页码：0502021 / 0502023

页数：3

共 16 条

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