The mechanism of toluene-assisted crystallization of organic-inorganic perovskites for highly efficient solar cells

被引:91
|
作者
Sakai, Nobuya [1 ]
Pathak, Sandeep [1 ]
Chen, Hsin-Wei [2 ]
Haghighirad, Amir A. [1 ]
Stranks, Samuel D. [3 ]
Miyasaka, Tsutomu [2 ]
Snaith, Henry J. [1 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Pk Rd, Oxford OX1 3PU, England
[2] Toin Univ Yokohama, Grad Sch Engn, Aoba Ku, Kuroganecho 1614, Yokohama, Kanagawa 2258503, Japan
[3] MIT, Elect Res Lab, 77 Massachusetts Ave, Cambridge, MA 02139 USA
基金
英国工程与自然科学研究理事会;
关键词
MIXED HALIDE PEROVSKITE; ANOMALOUS HYSTERESIS; CHLORIDE; CHEMISTRY; FILMS;
D O I
10.1039/c6ta01087c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the influence of solvent drenching in hybrid organic-inorganic perovskite (CH3NH3PbX) crystallization process with a non-solvent, toluene, during film fabrication process. We use three different precursor compositions, CH3NH3I (MAI):PbI2, 3MAI:PbI2 and 3MAI:PbCl2 to unravel the crystallization mechanism with toluene drenching. The mixed halide precursor (3MAI:PbCl2) results in the highest quality films with the toluene treatment, including high surface coverage, large grains, long PL lifetimes and high photoluminescence quantum efficiency (PLQE). The neat halide-based precursors (MAI:PbI2 and 3MAI:PbI2) with the treatment have increased photo-physical properties (PL lifetime and PLQE) and a surface coverage, but slightly decrease grain size in the film, while the 3MAI:PbI2 precursor has still formed numerous pinholes in the film. Mechanistically, we visually observe that the toluene drenching accelerates the nucleation at early stage of crystallization in 3MAI:PbCl2 precursor. X-ray diffraction pattern in this stage confirms the formation of both MAPbI(3) and MAPbCl(3), nucleation. During the crystallization process MAPbCl(3) is transformed into MAPbI(3) phase by the anion exchange. Toluene treatment strongly affects the ratio of MAPbI(3) and MAPbCl(3), nucleation and hence plays a critical role in deciding the final film morphology, their optoelectronic properties and hence their device performances.
引用
收藏
页码:4464 / 4471
页数:8
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