Electron-Related Phenomena at the TaN/Al2O3 Interface

被引：11

作者：

Rao, Rosario ^{[1
,2
]}

Lorenzi, Paolo ^{[1
,2
]}

Ghidini, Gabriella ^{[3
]}

Palma, Fabrizio ^{[1
,2
]}

Irrera, Fernanda ^{[1
,2
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Ingn Elettron, I-00184 Rome, Italy

[2] Italian Univ, NET, Rome, Italy

[3] Numonyx, I-20041 Agrate Brianza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 03期

关键词：

Electron trapping; interface degradation; metal/high-k interface; pulsed C-V technique; OXIDE INTERFACE; CHARGE; TECHNOLOGY;

D O I：

10.1109/TED.2009.2039100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of this work is to study the transient electrical features of metal/high-k interface in MOS stacks. To this aim, electrons are injected from the gate of TaN/Al2O3/SiO2/p-Si capacitors in pulsed regime. The displacement current flowing during the pulse front is detected, and the capacitance is extracted. As a result, for the first time, a flat-band instability related to electron trapping in states near the metal/high-k interface is measured on a millisecond timescale. A picture of the time evolution of the charge density inside the oxide bulk is drawn, with the aid of a finite-element simulator. Reliability of the metal/high-k interface is also investigated by performing stress experiments in pulsed conditions. It is shown that after a certain number of pulses, the creation of new traps at the top interface of the MOS stack becomes relevant.

引用

页码：637 / 643

页数：7

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