Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method

被引：13
作者：
Isomura, N.
Tsukamoto, S. [1 ]
Iizuka, K.
Arakawa, Y.
机构：
[1] Univ Tokyo, Nanoelectron Collaborat Res Ctr, Inst Ind Sci, Tokyo 1538505, Japan
[2] Nippon Inst Technol, Dept Elect & Elect Engn, Saitama 3458501, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷
关键词：
desorption; scanning tunneling microscope; surfaces; molecular beam epitaxy; GaAs; oxides;
D O I：
10.1016/j.jcrysgro.2006.11.185
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have used in in situ scanning tunneling microscopy to study GaAs(0 0 1) surface treated by As-free high temperature surface cleaning method. The temperatures ranged from 575 to 655 degrees C and an optimum temperature of 605 degrees C was found. Its surface had x6 structure parallel to [1 1 0] direction and smooth morphology by congruent evaporation. However, many pit-like structures formed lower than 600 degrees C. On the other hand, with 610 degrees C and higher, the surface became rough, forming many grooves with {1 1 1}B and {1 1 1}A facets. At 655 degrees C, the roughness was reduced but the surface easily became milky because of rapid As desorption. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：26 / 29
页数：4
相关论文
共 10 条
[1]   Effect of the starting surface on the morphology of MBE-grown GaAs [J].
Adamcyk, M ;
Pinnington, T ;
Ballestad, A ;
Tiedje, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :153-156
[2]  
ARAKAWA Y, 1982, APPL PHYS LETT, V40, P11
[3]   Atomic hydrogen cleaning of polar III-V semiconductor surfaces [J].
Bell, GR ;
Kaijaks, NS ;
Dixon, RJ ;
McConville, CF .
SURFACE SCIENCE, 1998, 401 (02) :125-137
[4]   ARSENIC-FREE GAAS SUBSTRATE PREPARATION AND DIRECT GROWTH OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL WITHOUT BUFFER LAYER [J].
IIZUKA, K ;
MATSUMARU, K ;
SUZUKI, T ;
HIROSE, H ;
SUZUKI, K ;
OKAMOTO, H .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :13-17
[5]   Structure of Ga-stabilized GaAs(001) surfaces at high temperatures [J].
Ohtake, A ;
Tsukamoto, S ;
Pristovsek, M ;
Koguchi, N .
APPLIED SURFACE SCIENCE, 2003, 212 :146-150
[6]   Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures -: art. no. 233311 [J].
Ohtake, A ;
Tsukamoto, S ;
Pristovsek, M ;
Koguchi, N ;
Ozeki, M .
PHYSICAL REVIEW B, 2002, 65 (23) :1-4
[7]  
SUGATA S, 1988, J VAC SCI TECHNOL B, V6, P4
[8]  
TAKAMORI A, 1987, JPN J APPL PHYS L, V142, P26
[9]  
TONE K, 1992, JPN J APPL PHYS, V31, P721
[10]   Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)(2 x 4)-As surface during molecular beam epitaxy growth [J].
Tsukamoto, S ;
Koguchi, N .
JOURNAL OF CRYSTAL GROWTH, 1999, 201 :118-123
1