Heteroepitaxial growth of single 3C-SiC thin films on Si(100) substrates using a single-source precursor of hexamethyldisilane by APCVD

This paper describes the heteroepitaxial growth of sing le-crystal line 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 degrees C for micro/ nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si-2(CH3)(6)) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H-2 carrier gas flow rate was 2.5 slin. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 mu m/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED),atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-c ry stall me 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.