On-Chip Microwave Frequency Combs in a Superconducting Nanoelectromechanical Device

被引:6
作者
Shin, Junghyun [1 ]
Ryu, Younghun [2 ]
Miri, Mohammad-Ali [3 ,4 ]
Shim, Seung-Bo [1 ]
Choi, Hyoungsoon [2 ]
Alu, Andrea [4 ,5 ]
Suh, Junho [1 ]
Cha, Jinwoong [1 ]
机构
[1] Korea Res Inst Stand & Sci, Quantum Technol Inst, Daejeon 34113, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Phys, Daejeon 34141, South Korea
[3] CUNY, Dept Phys, Queens Coll, Queens, NY 11367 USA
[4] CUNY, Grad Ctr, Phys Program, New York, NY 10016 USA
[5] CUNY, Photon Initiat, Adv Sci Res Ctr, New York, NY 10031 USA
基金
新加坡国家研究基金会;
关键词
microwave frequency comb; superconducting electromechanical device; optomechanical instability; nanomechanical sensing; MECHANICAL RESONATOR; CAVITY; GENERATION; OSCILLATOR;
D O I
10.1021/acs.nanolett.2c01503
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanomechanical resonances coupled to microwave cavities can be excited, measured, and controlled simultaneously using electromechanical back-action phenomena. Examples of these effects include sideband cooling and amplification, which are commonly described through linear equations of motion governed by an effective optomechanical Hamiltonian. However, this linear approximation is invalid when the pump-induced cavity microwave field is large enough to trigger optomechanical nonlinearities, resulting in phenomena like frequency combs. Here, we employ a niobium-based superconducting electromechanical device to explore the generation of microwave frequency combs. We observe the formation of combs around a microwave resonant frequency (3.78 GHz) with 8-MHz frequency spacing, equal to the mechanical resonant frequency. We investigate their dynamics for difl'erent optomechanical parameters, including detuning, pump powers, and cavity decay rates. Our experimental results show excellent agreement with numerical modeling. These electromechanical frequency combs can be beneficial in nanomechanical sensing applications that require precise electrical tracking of mechanical resonant frequencies.
引用
收藏
页码:5459 / 5465
页数:7
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