Inverted Polymer Solar Cells with Annealing-Free Solution-Processable NiO

被引:30
作者
Tran, Hong Nhan [1 ,2 ]
Dao, Duc Quang [3 ]
Yoon, Yung Jin [4 ,5 ]
Shin, Yun Seop [4 ,5 ]
Choi, Jin San [1 ,2 ]
Kim, Jin Young [4 ,5 ]
Cho, Shinuk [1 ,2 ]
机构
[1] Univ Ulsan, Dept Phys, Ulsan 44610, South Korea
[2] Univ Ulsan, Energy Harvest Storage Res Ctr EHSRC, Ulsan 44610, South Korea
[3] Univ Ulsan, Sch Chem Engn, Ulsan 44610, South Korea
[4] Ulsan Natl Inst Sci & Technol UNIST, Dept Energy Engn, Ulsan 44919, South Korea
[5] Ulsan Natl Inst Sci & Technol UNIST, Sch Energy & Chem Engn, Ulsan 44919, South Korea
基金
新加坡国家研究基金会;
关键词
annealing-free; charge transport layer; curing-free; metal oxides; nickel oxide; polymer solar cells; HOLE-TRANSPORT LAYERS; NICKEL-OXIDE; EFFICIENT; THIN; PERFORMANCE; STABILITY; BEHAVIOR;
D O I
10.1002/smll.202101729
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nickel oxide (NiO) offers intrinsic p-type behavior and high thermal and chemical stability, making it promising as a hole transport layer (HTL) material in inverted organic solar cells. However, its use in this application has been rare because of a wettability problem caused by use of water as base solvent and high-temperature annealing requirements. In the present work, an annealing-free solution-processable method for NiO deposition is developed and applied in both conventional and inverted non-fullerene polymer solar cells. To overcome the wettability problem, the typical DI water solvent is replaced with a mixed solvent of DI water and isopropyl alcohol with a small amount of 2-butanol additive. This allows a NiO nanoparticle suspension (s-NiO) to be deposited on a hydrophobic active layer surface. An inverted non-fullerene solar cell based on a blend of p-type polymer PTB7-Th and non-fullerene acceptor IEICO-4F exhibits the high efficiency of 11.23% with an s-NiO HTL, comparable to the efficiency of an inverted solar cell with a MoOx HTL deposited by thermal evaporation. Conventionally structured devices including this s-NiO layer show efficiency comparable to that of a conventional device with a PEDOT:PSS HTL.
引用
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页数:10
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